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| SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 2 MARCH 1995 PARTMARKING DETAIL FMMTA20 1C FMMTA20R 3C FMMTA70 FMMTA20 E C B COMPLEMENTARY TYPE ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCEO VEBO IC Ptot Tj:Tstg VALUE 40 4 100 330 -55 to +150 SOT23 UNIT V V mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Static Forward Current Transfer Ratio Collector-Emitter Saturation Voltage Transition Frequency Output Capacitance SYMBOL V(BR)CBO V(BR)EBO ICBO hFE VCE(sat) fT Cobo 125 4 40 MIN. 40 4 0.1 400 0.25 V MHz pF MAX. UNIT V V A CONDITIONS. IC=1mA, IE=0 IE=100mA, IC=0 VCB=30V, IE=0 IC=5mA, VCE=10V* IC=10mA,IB=1mA IC=5mA, VCE=10V f=100MHz VCB=10V, f=140kHz, IE=0 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device |
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